검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Performance improvement of plasmonic sensors using a combination of AC electrokinetic effects for (bio)target capture Avenas Q, Moreau J, Costella M, Maalaoui A, Souifi A, Charette P, Marchalot J, Frenea-Robin M, Canva M Electrophoresis, 40(10), 1426, 2019 |
| 2 |
Indium-oxide nanoparticles for RRAM devices compatible with CMOS back-end-off-line Perez EAAL, Guenery PV, Abouzaid O, Ayadi K, Brottet S, Moeyaert J, Labau S, Baron T, Blanchard N, Baboux N, Militaru L, Souifi A Solid-State Electronics, 143, 20, 2018 |
| 3 |
High sensitivity pH sensing on the BEOL of industrial FDSOI transistors Rahhal L, Ayele GT, Monfray S, Cloarec JP, Fornacciari B, Pardoux E, Chevalier C, Ecoffey S, Drouin D, Morin P, Garnier P, Boeuf F, Souifi A Solid-State Electronics, 134, 22, 2017 |
| 4 |
Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors Djamil R, Aicha K, Souifi A, Faycal D Thin Solid Films, 623, 1, 2017 |
| 5 |
Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide Hocevar M, Patriarche G, Souifi A, Gendry M Journal of Crystal Growth, 321(1), 1, 2011 |
| 6 |
Traps centers impact on Silicon nanocrystal memories given by Random Telegraph Signal and low frequency noise Trabelsi M, Militaru L, Sghaier N, Souifi A, Yacoubi N Solid-State Electronics, 56(1), 1, 2011 |
| 7 |
Transient charging current measurements and modelling in silicon nanocrystal floating gate devices Beaumont A, Souifi A Solid-State Electronics, 53(1), 42, 2009 |
| 8 |
Study of SiO2/Si interface properties of SON MOSFETs by random telegraph signal and charge pumping measurements Ferraton S, Militaru L, Souifi A, Monfray S, Skotnicki T Solid-State Electronics, 52(1), 44, 2008 |
| 9 |
On the saturation mechanism in the Ge nanocrystals-based non-volatile memory Kanoun M, Busseret C, Baron T, Souifi A Solid-State Electronics, 50(5), 769, 2006 |
| 10 |
Electronic properties of Ge nanocrystals for non volatile memory applications Kanoun M, Busseret C, Poncet A, Souifi A, Baron T, Gautier E Solid-State Electronics, 50(7-8), 1310, 2006 |