검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Planar double-gate SOI MOS devices: Fabrication by wafer bonding over pre-patterned cavities and electrical characterization Chung TM, Olbrechts B, Sodervall U, Bengtsson S, Flandre D, Raskin JP Solid-State Electronics, 51(2), 231, 2007 |
| 2 |
Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy Paskova T, Paskov PP, Goldys EM, Valcheva E, Darakchieva V, Sodervall U, Godlewski M, Zielinski M, Hautakangas S, Saarinen K, Carlstrom CF, Wahab Q, Monemar B Journal of Crystal Growth, 273(1-2), 118, 2004 |
| 3 |
Observation of vacancies during Zn diffusion in GaP Krause-Rehberg R, Bondarenko V, Popping J, Stolwijk NA, Staab TEM, Sodervall U Materials Science Forum, 445-6, 26, 2004 |
| 4 |
Influence of deuterium and platinum on the thermal oxidation of GaAs Hultquist G, Sproule GI, Moisa S, Graham MJ, Sodervall U Journal of the Electrochemical Society, 150(10), G617, 2003 |
| 5 |
Growth and separation related, properties of HVPE-GaN free-standing films Paskova T, Darakchieva V, Paskov P, Sodervall U, Monemar B Journal of Crystal Growth, 246(3-4), 207, 2002 |
| 6 |
Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties Mamutin VV, Shubina TV, Vekshin VA, Ratnikov VV, Toropov AA, Ivanov SV, Karlsteen M, Sodervall U, Willander M Applied Surface Science, 166(1-4), 87, 2000 |
| 7 |
Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs Zsebok O, Thordson JV, Ilver L, Sodervall U, Andersson TG Applied Surface Science, 166(1-4), 259, 2000 |
| 8 |
GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy Zhao QX, Zsebok O, Sodervall U, Karlsteen M, Willander M, Liu XQ, Chen YD, Lu W, Shen SC Journal of Crystal Growth, 208(1-4), 117, 2000 |
| 9 |
Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum Hermansson K, Grey F, Bengtsson S, Sodervall U Journal of the Electrochemical Society, 145(5), 1645, 1998 |
| 10 |
Charge-Carrier Injection into the Buried Oxide of Wafer-Bonded Silicon-on-Insulator Materials Bengtsson S, Ericsson P, Sodervall U, Mitani K, Abe T Journal of the Electrochemical Society, 142(8), 2721, 1995 |