검색결과 : 7건
No. | Article |
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1 |
Ultralow-k/Cu Damascene Multilevel Interconnects Using High Porosity and High Modulus Self-Assembled Porous Silica Chikaki S, Kinoshita K, Kohmura K, Tanaka H, Soda E, Suzuki T, Seino Y, Hata N, Saito S, Kikkawa T Journal of the Electrochemical Society, 157(5), H519, 2010 |
2 |
Reduction effect of line edge roughness on time-dependent dielectric breakdown lifetime of Cu/low-k interconnects by using CF3I etching Soda E, Oda N, Ito S, Kondo S, Saito S, Samukawa S Journal of Vacuum Science & Technology B, 27(2), 649, 2009 |
3 |
Mechanism of reducing line edge roughness in ArF photoresist by using CF3I plasma Soda E, Kondo S, Saito S, Koyama K, Jinnai B, Samukawa S Journal of Vacuum Science & Technology B, 27(5), 2117, 2009 |
4 |
Low-damage low-k etching with an environmentally friendly CF3I Plasma Soda E, Kondo S, Saito S, Ichihashi Y, Sato A, Ohtake H, Samukawa S Journal of Vacuum Science & Technology A, 26(4), 875, 2008 |
5 |
Photoresist removal process by hydrogen radicals generated by W catalyst Takata M, Ogushi K, Yuba Y, Akasaka Y, Tomioka K, Soda E, Kobayashi N Thin Solid Films, 516(5), 847, 2008 |
6 |
Influences of atomic hydrogen on porous low-k dielectric for 45-nm node Tomioka K, Soda E, Kobayashi N, Takata M, Uda S, Ogushi K, Yuba Y, Akasaka Y Thin Solid Films, 515(12), 5031, 2007 |
7 |
Ultrathin pore-seal film by plasma enhanced chemical vapor deposition SiCH from tetramethylsilane Furuya A, Yoneda K, Soda E, Yoshie T, Okamura H, Shimada M, Ohtsuka N, Ogawa S Journal of Vacuum Science & Technology B, 23(6), 2522, 2005 |