검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) Poblenz C, Waltereit P, Rajan S, Mishra UK, Speck JS, Chin R, Smorchkova I, Heying B Journal of Vacuum Science & Technology B, 23(4), 1562, 2005 |
| 2 |
X-ray diffraction imaging of GaN-based heterostructures on SiC Poust B, Feichtinger P, Sandhu R, Smorchkova I, Heying B, Block T, Wojtowicz M, Goorsky M Materials Science Forum, 457-460, 1601, 2004 |