검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Improved modeling on the RF behavior of InAs/AlSb HEMTs Guan H, Lv HL, Zhang YM, Zhang YM Solid-State Electronics, 114, 155, 2015 |
| 2 |
Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction Tinoco JC, Martinez-Lopez AG, Raskin JP Solid-State Electronics, 56(1), 214, 2011 |
| 3 |
Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs DG-HEMT for millimeter-wave applications Bhattacharya M, Jogi J, Gupta RS, Gupta M Solid-State Electronics, 63(1), 149, 2011 |
| 4 |
An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters Oudir A, Mahdouani M, Bourguiga R, Pardo F, Pelouard JL Solid-State Electronics, 52(11), 1742, 2008 |
| 5 |
Investigation and modeling of impact ionization in HEMTs for DC and RF operating conditions Isler M Solid-State Electronics, 46(10), 1587, 2002 |