검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Effects of growth temperature and oxidant feeding time on residual C-and N-related impurities and Si diffusion behavior in atomic-layer-deposited La2O3 thin films Park TJ, Sivasubramani P, Wallace RM, Kim J Applied Surface Science, 292, 880, 2014 |
| 2 |
Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films Park TJ, Sivasubramani P, Coss BE, Lee B, Wallace RM, Kim J, Rousseau M, Liu XY, Li HZ, Lehn JS, Hong DW, Shenai D Electrochemical and Solid State Letters, 14(5), G23, 2011 |
| 3 |
Deposition of Hf-silicate gate dielectric on SixGe1-X(100): Detection of interfacial layer growth Addepalli S, Sivasubramani P, El-Bouanani M, Kim MJ, Gnade BE, Wallace RM Journal of Vacuum Science & Technology A, 22(3), 616, 2004 |