검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Development of certified reference materials of ion-implanted dopants in silicon for calibration of secondary ion mass spectrometers Simons DS, Downing RG, Lamaze GP, Lindstrom RM, Greenberg RR, Paul RL, Schiller SB, Guthrie WF Journal of Vacuum Science & Technology B, 25(4), 1365, 2007 |
| 2 |
High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry Chi PH, Simons DS, McKinley JM, Stevie FA, Granger CN Journal of Vacuum Science & Technology A, 20(3), 688, 2002 |
| 3 |
"p-on-n" Si interband tunnel diode grown by molecular beam epitaxy Hobart KD, Thompson PE, Rommel SL, Dillon TE, Berger PR, Simons DS, Chi PH Journal of Vacuum Science & Technology B, 19(1), 290, 2001 |
| 4 |
Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si Thompson PE, Silvestre C, Twigg M, Jernigan G, Simons DS Thin Solid Films, 321(1-2), 120, 1998 |
| 5 |
Repeatability of Si Concentration Measurements in Si-Doped GaN Films Chi PH, Simons DS, Wickenden AE, Koleske DD Journal of Vacuum Science & Technology A, 15(5), 2565, 1997 |
| 6 |
Si1-xGex/Si Multiple-Quantum Wells on Si(100) and Si(110) for Infrared-Absorption Kreifels TL, Hengehold RL, Yeo YK, Thompson PE, Simons DS Journal of Vacuum Science & Technology A, 13(3), 636, 1995 |
| 7 |
Microstructure and Characterization of Electron-Trapping Stimulable Phosphor SRS(Eu,Sm) Thin-Film on Glass Hsieh TJ, Revay R, Brower D, Chi PH, Simons DS, Newbury DE, Robey SW Journal of Vacuum Science & Technology A, 13(6), 2732, 1995 |
| 8 |
Review of Secondary-Ion Mass-Spectrometry Characterization of Contamination Associated with Ion-Implantation Stevie FA, Wilson RG, Simons DS, Current MI, Zalm PC Journal of Vacuum Science & Technology B, 12(4), 2263, 1994 |