| 1 |
Limited in incorporation during pseudomorphic InAs/GaAs growth and quantum dot formation observed by in situ stress measurements
Silveira JP, Garcia JM, Briones F
Applied Surface Science, 188(1-2), 75, 2002 |
| 2 |
In situ measurements of As/P exchange during InAs/InP(001) quantum wires growth
Gonzalez MU, Garcia JM, Gonzalez L, Silveira JP, Gonzalez Y, Gomez JD, Briones F
Applied Surface Science, 188(1-2), 188, 2002 |
| 3 |
A growth method to obtain flat and relaxed In0.2Ga0.8As on GaAs (001) developed through in situ monitoring of surface topography and stress evolution
Gonzalez MU, Gonzalez Y, Gonzalez L, Calleja M, Silveira JP, Garcia JM, Briones F
Journal of Crystal Growth, 227, 36, 2001 |
| 4 |
InAs/InP(001) quantum wire formation due to anisotropic stress relaxation: in situ stress measurements
Garcia JM, Gonzalez L, Gonzalez MU, Silveira JP, Gonzalez Y, Briones F
Journal of Crystal Growth, 227, 975, 2001 |
| 5 |
Surface stress effects during MBE growth of III-V semiconductor nanostructures
Silveira JP, Garcia JM, Briones F
Journal of Crystal Growth, 227, 995, 2001 |
