검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Experimental DC extraction of the thermal resistance of bipolar transistors taking into account the Early effect d'Alessandro V Solid-State Electronics, 127, 5, 2017 |
| 2 |
Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz Deng M, Quemerais T, Bouvot S, Gloria D, Chevalier P, Lepilliet S, Danneville F, Dambrine G Solid-State Electronics, 129, 150, 2017 |
| 3 |
Ge/SiGe superlattices for nanostructured thermoelectric modules Chrastina D, Cecchi S, Hague JP, Frigerio J, Samarelli A, Ferre-Llin L, Paul DJ, Muller E, Etzelstorfer T, Stangl J, Isella G Thin Solid Films, 543, 153, 2013 |
| 4 |
Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique Valenza M, Husseini JE, Martinez F, Bawedin M, Le Royer C, Damlencourt JF Solid-State Electronics, 70, 27, 2012 |
| 5 |
Double-polysilicon SiGe HBT architecture with lateral base link Fox A, Heinemann B, Rucker H Solid-State Electronics, 60(1), 93, 2011 |
| 6 |
Characterization of silicon-germanium heterojunction bipolar transistors degradation in silicon-germanium BiCMOS technologies Lee SY, Park CW Solid-State Electronics, 50(3), 333, 2006 |
| 7 |
The influence of the edge effect of the mask on the strain and the morphology of SiGe film grown at the patterned Si substrate by molecular beam epitaxy Yang HB, Zhang XJ, Jiang ZM, Lu XD, Bai LH, Yang XJ, Fan YL, Hu DZ, Sun YQ, Huang WN Thin Solid Films, 514(1-2), 344, 2006 |
| 8 |
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices Isella G, Chrastina D, Rossner B, Hackbarth T, Herzog H, Konig U, von Kanel H Solid-State Electronics, 48(8), 1317, 2004 |
| 9 |
High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition Chrastina D, Isella G, Rossner B, Bollani M, Muller E, Hackbarth T, von Kanel H Thin Solid Films, 459(1-2), 37, 2004 |