| 1 |
One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma
Huang TY, Jin CG, Yu J, Yang Y, Zhuge LJ, Wu XM, Sha ZD
Plasma Chemistry and Plasma Processing, 37(4), 1237, 2017 |
| 2 |
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
Samnakay R, Balandin AA, Srinivasan P
Solid-State Electronics, 135, 37, 2017 |
| 3 |
Ultrathin DPN STI SiON liner for 40 nm low-power CMOS technology
Hu CY, Chen JF, Chen SC, Chang SJ, Lee KM, Lee CP
Solid-State Electronics, 54(5), 564, 2010 |
| 4 |
Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition
Dupuis J, Fourmond E, Ballutaud D, Bererd N, Lemiti M
Thin Solid Films, 519(4), 1325, 2010 |
| 5 |
Vertical Alignment of Liquid Crystal on a-SiON Thin Film Exposed by Ion Beam
Hwang SW, Jo BK, Yoon TH, Kim JC
Molecular Crystals and Liquid Crystals, 507, 307, 2009 |
| 6 |
Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation
Dupuis J, Fourmond E, Lelievre JF, Ballutaud D, Lemiti M
Thin Solid Films, 516(20), 6954, 2008 |
| 7 |
Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors
Claeys C, Simoen E, Srinivasan P, Misra D
Solid-State Electronics, 51(4), 627, 2007 |
| 8 |
Feasibility of re-oxidized nitrided oxide (RONO) as a charge-trapping medium for the non-volatile memory
Lee SE, Kim JY, An HM, Seo KY, Kim B
Solid-State Electronics, 51(7), 1009, 2007 |
| 9 |
Quantitative analysis of chemical compositions in ultra-thin oxide-nitride-oxide stacked films having wet oxidized blocking layer
Lee SE, Kim B, Kim JY, An HM, Seo KY
Thin Solid Films, 515(17), 6915, 2007 |
| 10 |
The reduction of the change of secondary ions yield in the thin SiON/Si system
Sameshima J, Yamamoto H, Hasegawa T, Nishina T, Nishitani T, Yoshikawa K, Karen A
Applied Surface Science, 252(19), 7190, 2006 |
