검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Gate patterning in 14 nm and beyond nodes: from planar devices to three dimensional Finfet devices Meng LK, Hong PZ, He XB, Li CL, Li JJ, Li JF, Zhao C, Wei YY, Yan J Applied Surface Science, 362, 483, 2016 |
| 2 |
Dry etching characteristics of GaN using Cl-2/BCl3 inductively coupled plasmas Zhou SJ, Cao B, Liu S Applied Surface Science, 257(3), 905, 2010 |
| 3 |
Trench formation on ion implanted SiC surface after thermal oxidation Bahng W, Song GH, Kim NK, Kim SC, Kim HW, Seo KS, Kim ED Materials Science Forum, 483, 777, 2005 |
| 4 |
Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask Naoi H, Narukawa M, Miyake H, Hiramatsu K Journal of Crystal Growth, 248, 573, 2003 |