화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Efficient relaxation of strained-SiGe layers induced by thermal oxidation
Jang JH, Son SY, Lim W, Phen MS, Siebein K, Craciun V
Thin Solid Films, 518(9), 2462, 2010
2 pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues
Hikavyy A, Bhouri N, Loo R, Verheyen P, Clemente F, Hopkins J, Trussell R, Caymax M
Thin Solid Films, 517(1), 113, 2008
3 Growth of strained Si on He ion implanted Si/SiGe heterostructures
Buca D, Feste SF, Hollander B, Mantl S, Loo R, Caymax M, Carius R, Schaefer H
Solid-State Electronics, 50(1), 32, 2006