화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
Mooney PM, Rim K, Christiansen SH, Chan KK, Chu JO, Cai J, Chen H, Jordan-Sweet JL, Yang YY, Boyd DC
Solid-State Electronics, 49(10), 1669, 2005
2 Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation
Kuchenbecker J, Kibbel H, Muthsam P, Konig U
Thin Solid Films, 389(1-2), 146, 2001
3 Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs
Wohl G, Dudek V, Graf M, Kibbel H, Herzog HJ, Klose M
Thin Solid Films, 369(1-2), 175, 2000