검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Comparative study of low frequency noise and hot-carrier reliability in SiGePD SOI pMOSFETs Choi SS, Choi AR, Yang JW, Hwang YW, Cho DH, Shim KH Applied Surface Science, 254(19), 6190, 2008 |
| 2 |
Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique Irisawa T, Numata T, Hirashita N, Moriyama Y, Nakaharai S, Tezuka T, Sugiyama N, Takagi S Thin Solid Films, 517(1), 167, 2008 |
| 3 |
Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe Wu D, Lu J, Vainonen-Ahlgren E, Tois E, Tuominen M, Ostling M, Zhang SL Solid-State Electronics, 49(2), 193, 2005 |
| 4 |
Quantitative analysis of gate-oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures Norris DJ, Cullis AG, Olsen SH, O'Neill AG Thin Solid Films, 474(1-2), 154, 2005 |
| 5 |
Low-frequency noise suppression and dc characteristics enhancement in sub-mu m metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE Myronov M, Durov S, Mironov OA, Parker EHC, Whall TE, Hackbarth T, Hock G, Herzog HJ, Konig U Applied Surface Science, 224(1-4), 265, 2004 |
| 6 |
DC and RF characteristics of RPCVD grown modulation doped Si0.8Ge0.2 pMOSFETs Song YJ, Kim SH, Lee SH, Bae HC, Kang JY, Shim KH, Kim JH, Song JI Solid-State Electronics, 48(2), 315, 2004 |
| 7 |
Investigation of strained Si/SiGe devices by MC simulation Jungemann C, Subba N, Goo JS, Riecobene C, Xiang Q, Meinerzhagen B Solid-State Electronics, 48(8), 1417, 2004 |
| 8 |
Novel strained Si/relaxed SiGe channel PMOSFETs Li C, Luo GL, Liu ZN, Chen PY, Tsien PH Thin Solid Films, 409(1), 112, 2002 |
| 9 |
Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs Tsuchiya T, Goto K, Sakuraba M, Matsuura T, Murota J Thin Solid Films, 369(1-2), 379, 2000 |