검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
4H-SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth Balachandran A, Song HZ, Sudarshan TS, Chandrashekhar MVS Journal of Crystal Growth, 448, 97, 2016 |
| 2 |
Large area SiC epitaxial layer growth in a warm-wall planetary VPE reactor Burk AA, O'Loughlin MJ, Paisley MJ, Powell AR, Brady MF, Leonard RT, Muller S, Allen ST Materials Science Forum, 483, 137, 2005 |
| 3 |
Development of epitaxial SiC processes suitable for bipolar power devices Sumakeris JJ, Das MK, Ha S, Hurt E, Irvine K, Paisley MJ, O'Loughlin MJ, Palmour JW, Skowronski M, Hobgood HM, Carter CH Materials Science Forum, 483, 155, 2005 |
| 4 |
Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane Yasui K, Asada K, Akahane T Applied Surface Science, 159, 556, 2000 |
| 5 |
Morphology control for growth of thick epitaxial 4H SiC layers Zhang J, Ellison A, Janzen E Materials Science Forum, 338-3, 137, 2000 |