검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Electrical Characteristics Temperature Dependence of 600V-class Deep Implanted Gate Vertical JFET Mizukami M, Takikawa O, Imai S, Kinoshita K, Hatakeyama T, Domon T, Shinohe T Materials Science Forum, 483, 881, 2005 |
| 2 |
A 600V deep-implanted gate vertical JFET Mizukami M, Takikawa O, Murooka M, Imai S, Kinoshita K, Hatakeyama T, Tsukuda M, Saito W, Omura I, Shinohe T Materials Science Forum, 457-460, 1217, 2004 |
| 3 |
Simulation study of 4H-SiC junction-gated MOSFETs from 300 K to 773 K Lee HS, Koo SM, Zetterling CM, Danielsson E, Domeij M, Ostling M Materials Science Forum, 457-460, 1437, 2004 |
| 4 |
Design and processing of high-voltage 4H-SiC trench junction field-effect transistor Zhu L, Chow TP Materials Science Forum, 389-3, 1231, 2002 |
| 5 |
Static and dynamic behaviour of SiC JFET/Si MOSFET cascade configuration for high-performance power switches Mihaila A, Udrea F, Azar R, Brezeanu G, Amaratunga G Materials Science Forum, 389-3, 1239, 2002 |