검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation Nakajima K, Fujiwara K, Morishita K Journal of Crystal Growth, 311(21), 4587, 2009 |
| 2 |
Ga segregation in Czochralski-Si crystal growth with B codoping Huang XM, Arivanandhan M, Gotoh R, Hoshikawa T, Uda S Journal of Crystal Growth, 310(14), 3335, 2008 |
| 3 |
Analysis of the reaction at the interface between Si melt and Ba-doped silica glass Huang X, Hoshikawa T, Uda S Journal of Crystal Growth, 306(2), 422, 2007 |
| 4 |
In situ observations of crystal growth of spherical Si single crystals Huang XN, Uda S, Tanabe H, Kitahara N, Arimune H, Hoshikawa K Journal of Crystal Growth, 307(2), 341, 2007 |
| 5 |
Si multicrystals grown by the Czochralski method with multi-seeds Hoshikawa T, Taishi T, Huang X, Uda S, Yamatani M, Shirasawa K, Hoshikawa K Journal of Crystal Growth, 307(2), 466, 2007 |
| 6 |
Segregation of Ga during growth of Si single crystal Hoshikawa T, Huang X, Uda S, Taishi T Journal of Crystal Growth, 290(2), 338, 2006 |
| 7 |
Heavily doped silicon crystals: neckless growth and robust wafers Hoshikawa K, Huang XM, Taishi T Journal of Crystal Growth, 275(1-2), 276, 2005 |
| 8 |
Reaction at the interface between Si melt and a Ba-doped silica crucible Huang XM, Koh SJ, Wu KH, Chen MW, Hoshikawa T, Hoshikawa K, Uda S Journal of Crystal Growth, 277(1-4), 154, 2005 |
| 9 |
FT-IR study of electron- or proton-irradiated Si crystals for solar cells Nagai N, Ishida H, Hisamatsu T, Aburaya T, Matsuda S Journal of Crystal Growth, 210(1-3), 74, 2000 |
| 10 |
Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration Huang XM, Taishi T, Yonenaga I, Hoshikawa K Journal of Crystal Growth, 213(3-4), 283, 2000 |