검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Bulk growth of 6H-SiC on non-basal quasi-polar faces Shishkin Y, Kordina O Journal of Crystal Growth, 291(2), 317, 2006 |
| 2 |
High growth rates (> 30 mu m/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor Myers RL, Shishkin Y, Kordina O, Saddow SE Journal of Crystal Growth, 285(4), 486, 2005 |
| 3 |
A short synopsis of the current status of porous SiC and GaN Shishkin Y, Ke Y, Devaty RP, Choyke WJ Materials Science Forum, 483, 251, 2005 |
| 4 |
Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals von Bardeleben HJ, Cantin JL, Ke L, Shishkin Y, Devaty RP, Choyke WJ Materials Science Forum, 483, 273, 2005 |
| 5 |
Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC von Bardeleben HJ, Cantin JL, Vickridge IC, Song YW, Dhar S, Feldman LC, Williams JR, Ke L, Shishkin Y, Devaty RP, Choyke WJ Materials Science Forum, 483, 277, 2005 |
| 6 |
Brillouin scattering studies of surface acoustic waves in SiC Andrews GT, Clouter MJ, Mroz B, Shishkin Y, Ke Y, Devaty RP, Choyke WJ Materials Science Forum, 457-460, 653, 2004 |
| 7 |
Microscopic structure and electrical activity of 4H-SIC/SiO2 interface defects : an EPR study of oxidized porous SiC von Bardeleben HJ, Cantin JL, Shishkin Y, Devaty RP, Choyke WJ Materials Science Forum, 457-460, 1457, 2004 |
| 8 |
Porous silicon carbide as a membrane for implantable biosensors Rosenbloom AJ, Shishkin Y, Sipe DM, Ke Y, Devaty RP, Choyke WJ Materials Science Forum, 457-460, 1463, 2004 |
| 9 |
Triangular pore formation in highly doped n-type 4H SIC Shishkin Y, Choyke WJ, Devaty RP Materials Science Forum, 457-460, 1467, 2004 |
| 10 |
Porous structure of anodized p-type 6H SiC Shishkin Y, Ke Y, Devaty RP, Choyke WJ Materials Science Forum, 457-460, 1471, 2004 |