검색결과 : 83건
| No. | Article |
|---|---|
| 1 |
The Daple-CK1 epsilon complex regulates Dvl2 phosphorylation and canonical Wnt signaling Esaki N, Enomoto A, Takagishi M, Mizutani Y, Iida T, Ushida K, Shiraki Y, Mii S, Takahashi M Biochemical and Biophysical Research Communications, 532(3), 406, 2020 |
| 2 |
Convenient Synthetic Approach to Poly(N-Methyl L-Alanine) Through Polycondensation of Activated Urethane Derivative of N-Methyl L-Alanine Shiraki Y, Yamada S, Endo T Journal of Polymer Science Part A: Polymer Chemistry, 55(10), 1674, 2017 |
| 3 |
Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator Sawano K, Hoshi Y, Kubo S, Arimoto K, Yamanaka J, Nakagawa K, Hamaya K, Miyao M, Shiraki Y Thin Solid Films, 613, 24, 2016 |
| 4 |
Preparation of Molecule-Responsive Microsized Hydrogels via Photopolymerization for Smart Microchannel Microvalves Shiraki Y, Tsuruta K, Morimoto J, Ohba C, Kawamura A, Yoshida R, Kawano R, Uragami T, Miyata T Macromolecular Rapid Communications, 36(6), 515, 2015 |
| 5 |
Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates Sawano K, Hoshi Y, Kubo S, Yamada S, Nakagawa K, Shiraki Y Journal of Crystal Growth, 401, 758, 2014 |
| 6 |
Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy Nishida K, Xu XJ, Sawano K, Maruizumi T, Shiraki Y Thin Solid Films, 557, 66, 2014 |
| 7 |
Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer Sawano K, Hoshi Y, Endo S, Nagashima T, Arimoto K, Yamanaka J, Nakagawa K, Yamada S, Hamaya K, Miyao M, Shiraki Y Thin Solid Films, 557, 76, 2014 |
| 8 |
N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing Hara KO, Hoshi Y, Usami N, Shiraki Y, Nakamura K, Toko K, Suemasu T Thin Solid Films, 557, 90, 2014 |
| 9 |
Microdisk enhanced photodetector based on Ge self-assembled quantum dots on silicon-on-insulator Xu XJ, Chiba T, Maruizumi T, Shiraki Y Thin Solid Films, 557, 363, 2014 |
| 10 |
Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy Arimoto K, Furukawa H, Yamanaka J, Yamamoto C, Nakagawa K, Usami N, Sawano K, Shiraki Y Journal of Crystal Growth, 362, 276, 2013 |