화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Potassium-doped CO3O4 catalyst for direct decomposition of N2O
Asano K, Ohnishi C, Iwamoto S, Shioya Y, Inoue M
Applied Catalysis B: Environmental, 78(3-4), 242, 2008
2 Copper barrier properties of low dielectric constant SiOCNH film deposited by plasma-enhanced CVD
Shioya Y, Ishimaru T, Ikakura H, Nishimoto Y, Ohdaira T, Suzuki R, Maeda K
Journal of the Electrochemical Society, 151(1), C56, 2004
3 Positron and positronium annihilation in low-dielectric-constant films studied by a pulsed positron beam
Suzuki R, Ohdaira T, Kobayashi Y, Ito K, Yu RS, Shioya Y, Ichikawa H, Hosomi H, Ishikiriyama K, Shirataki H, Matsuno S, Xu J
Materials Science Forum, 445-6, 224, 2004
4 Synthesis of transparent Ti-containing mesoporous silica thin film materials and their unique photocatalytic activity for the reduction of CO2 with H2O
Shioya Y, Ikeue K, Ogawa M, Anpo M
Applied Catalysis A: General, 254(2), 251, 2003
5 The effect of the framework structure on the chemical properties of the vanadium oxide species incorporated within zeolites
Anpo M, Higashimoto S, Matsuoka M, Zhanpeisov N, Shioya Y, Dzwigaj S, Che M
Catalysis Today, 78(1-4), 211, 2003
6 The effect of the framework structure on the chemical properties of the vanadium oxide species incorporated within zeolites (vol 78, pg 211, 2003)
Anpo M, Higashimoto S, Matsuoka M, Zhanpeisov N, Shioya Y, Dzwigaj S, Che M
Catalysis Today, 86(1-4), 287, 2003
7 The effects of dilution gas and pressure on the properties of PE-CVD low-k film
Shioya Y, Kotake Y, Ishimaru T, Masubuchi T, Ikakura H, Ohgawara S, Maeda K
Journal of the Electrochemical Society, 150(2), F1, 2003
8 Properties of low-k copper barrier SiOCH film deposited by PECVD using hexamethyldisiloxane and N2O
Ishimaru T, Shioya Y, Ikakura H, Nozawa M, Ohgawara S, Ohdaira T, Suzuki R, Maeda K
Journal of the Electrochemical Society, 150(5), F83, 2003
9 Analysis of pore and pore-related properties in plasma-enhanced chemical vapor deposition low dielectric constant films
Shioya Y, Maeda K, Ishimaru T, Ohdaira T, Suzuki R
Journal of the Electrochemical Society, 149(9), F103, 2002
10 Mechanism of mechanical and chemical polishing in low dielectric constant plasma-enhanced chemical vapor deposition SiOC layer from hexamethyldisiloxane
Hara T, Togoh F, Kurosu T, Sakamoto K, Shioya Y, Ishimaru T, Doy TK
Electrochemical and Solid State Letters, 4(8), G65, 2001