검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
The effect of nitrous oxide plasma treatment on the bias temperature stress of metal oxide thin film transistors with high mobility Tseng WH, Fang SW, Lu CY, Chuang HY, Chang FW, Lin GY, Chen TW, Ma KH, Chen HS, Chen TK, Chen YH, Lee JY, Shih TH, Ting HC, Chen CY, Lin YH, Hong HJ Solid-State Electronics, 103, 173, 2015 |
| 2 |
Amorphous indium-gallium-zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model Shih TH, Fang SW, Lee JY, Lin GY, Chen YH, Hsin LP, Li HH, Yang CW, Chen CT, Lu HH, Cheng KC, Lin CY, Chen CY, Yang CM, Tsai HT, Lin YH Solid-State Electronics, 73, 74, 2012 |
| 3 |
Zinc Oxide and Zinc Hydroxide Growth Controlled by Nitric Acid in Zinc Nitrate and Hexamethylenetetramine Lee MK, Shih TH, Chen PC Journal of the Electrochemical Society, 156(4), H268, 2009 |
| 4 |
High photocatalytic activity of heterojunction of zinc selenide grown on nanoscaled titanium oxide Leez MK, Shih TH Journal of the Electrochemical Society, 155(4), K63, 2008 |
| 5 |
High photocatalytic activity of nanoscaled heterojunction of ZnS grown on fluorine and nitrogen co-doped TiO2 Lee MK, Shih TH Journal of the Electrochemical Society, 154(4), P49, 2007 |
| 6 |
High-density ZnSe self-assembled quantum dots grown on ZnS/GaAs with special ZnS buffer layer Lee MK, Shih TH, Lan CC Journal of the Electrochemical Society, 153(8), G778, 2006 |
| 7 |
Mechanism of cluster formation on zinc selenium/gallium arsenic prepared by metallorganic vapor phase epitaxy Lee MK, Lan CC, Shih TH Journal of the Electrochemical Society, 152(12), G929, 2005 |
| 8 |
Electrical properties of fluorine-doped oxynitride films prepared by photoillumination liquid-phase deposition Lee MK, Shih CM, Lin SY, Yang CD, Shih TH Journal of the Electrochemical Society, 151(12), G829, 2004 |