검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 mu m Boehm G, Grau M, Dier O, Windhorn K, Roenneberg E, Rosskopf J, Shau R, Meyer R, Ortsiefer M, Amann MC Journal of Crystal Growth, 301, 941, 2007 |
| 2 |
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 mu m Boehm G, Ortsiefer M, Shau R, Rosskopf J, Lauer C, Maute M, Kohler F, Mederer F, Meyer R, Amann MC Journal of Crystal Growth, 251(1-4), 748, 2003 |
| 3 |
AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers Boehm G, Ortsiefer M, Shau R, Koehler F, Meyer R, Amann MC Journal of Crystal Growth, 227, 319, 2001 |