검색결과 : 1건
No. | Article |
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1 |
Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction Hamilton JJ, Colombeau B, Sharp JA, Cowern NEB, Kirkby KJ, Collart EJH, Bersani M, Giubertoni D Journal of Vacuum Science & Technology B, 24(1), 442, 2006 |