1 |
Effect of a Multi-Step Gap-Filling Process to Improve Adhesion between Low-K Films and Metal Patterns Lee W, Kim TH, Choa YH Korean Journal of Materials Research, 26(8), 427, 2016 |
2 |
Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors Kwon SK, Kwon HM, Choi WI, Song HS, Lee HD Solid-State Electronics, 119, 29, 2016 |
3 |
Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors Hsieh CP, Liao MH, Lee CC, Cheng TC, Wang CP, Huang PC, Cheng SW Thin Solid Films, 618, 172, 2016 |
4 |
Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern Lee CC, Liu CH, Deng RH, Hsu HW, Chiang KN Thin Solid Films, 557, 323, 2014 |
5 |
Narrow gap filling in 25 nm shallow trench isolation using highly porous organosilica Oh H, Kim JH, Jang J Thin Solid Films, 562, 166, 2014 |
6 |
Design and optimization of high voltage LDMOS transistors on 0.18 mu m SOI CMOS technology Toulon G, Cortes I, Morancho F, Hugonnard-Bruyere E, Villard B, Toren WJ Solid-State Electronics, 61(1), 111, 2011 |
7 |
Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device Hung HJ, Kuo JB, Chen D, Tsai CT, Yeh C Solid-State Electronics, 54(5), 609, 2010 |
8 |
Investigation of impact of shallow trench isolation on SONOS type memory cells Xu Y, Yan F, Chen DJ, Shi Y, Li ZG, Yang F, Wang J, Wang YG, Lin P, Chang JG, Yi C Solid-State Electronics, 54(12), 1644, 2010 |
9 |
Short-channel epitaxial germanium pMOS transistors Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM Thin Solid Films, 518, S88, 2010 |
10 |
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches Wang G, Loo R, Takeuchi S, Souriau L, Lin JC, Moussa A, Bender H, De Jaeger B, Ong P, Lee W, Meuris M, Caymax M, Vandervorst W, Blanpain B, Heyns MM Thin Solid Films, 518(9), 2538, 2010 |