화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Improvement of PECVD Silicon-Germanium Crystallization for CMOS Compatible MEMS Applications
Guo B, Severi S, Bryce G, Claes G, Van Hoof R, Du Bois B, Haspeslagh L, Witvrouw A, Decoutere S
Journal of the Electrochemical Society, 157(2), D103, 2010
2 Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing
Felch SB, Collart E, Parihar V, Thirupapuliyur S, Schreutelkamp R, Pawlak BJ, Hoffmann T, Severi S, Eyben P, Vandervorst W, Noda T
Journal of Vacuum Science & Technology B, 26(1), 281, 2008
3 Novel concepts for improved communication between nerve cells and silicon electronic devices
Huys R, Braeken D, Van Meerbergen B, Winters K, Eberle W, Loo J, Tsvetanova D, Chen C, Severi S, Yitzchaik S, Spira M, Shappir J, Callewaert G, Borghs G, Bartic C
Solid-State Electronics, 52(4), 533, 2008
4 Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing
Augendre E, Pawlak BJ, Kubicek S, Hoffmann T, Chiarella T, Kerner C, Severi S, Falepin A, Ramos J, De Keersgieter A, Eyben P, Vanhaeren D, Vandervorst W, Jurczak M, Absil P, Biesemans S
Solid-State Electronics, 51(11-12), 1432, 2007
5 Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultra-shallow junction formation
Collart EJH, Felch SB, Pawlak BJ, Absil PP, Severi S, Janssens T, Vandervorst W
Journal of Vacuum Science & Technology B, 24(1), 507, 2006