화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 mu m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy
Chen J, Malis O, Sergent AM, Sivco DL, Weimann N, Cho AY
Journal of Vacuum Science & Technology B, 25(3), 913, 2007
2 Advances in high kappa gate dielectrics for Si and III-V semiconductors
Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, Gustafsson T
Journal of Crystal Growth, 251(1-4), 645, 2003
3 Fabrication methods for a quantum cascade photonic crystal surface emitting laser
Tennant DM, Colombelli R, Srinivasan K, Troccoli M, Painter O, Gmachi C, Capasso F, Sergent AM, Sivco DL, Cho AY
Journal of Vacuum Science & Technology B, 21(6), 2907, 2003
4 Passivation of GaAs using gallium-gadolinium oxides
Kwo J, Murphy DW, Hong M, Mannaerts JP, Opila RL, Masaitis RL, Sergent AM
Journal of Vacuum Science & Technology B, 17(3), 1294, 1999
5 Structural properties of Ga2O3(Gd2O3)-GaAs interfaces
Hong M, Marcus MA, Kwo J, Mannaerts JP, Sergent AM, Chou LJ, Hsieh KC, Cheng KY
Journal of Vacuum Science & Technology B, 16(3), 1395, 1998