검색결과 : 5건
No. | Article |
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1 |
In0.68Ga0.32As/Al0.64In0.36As/InP 4.5 mu m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy Chen J, Malis O, Sergent AM, Sivco DL, Weimann N, Cho AY Journal of Vacuum Science & Technology B, 25(3), 913, 2007 |
2 |
Advances in high kappa gate dielectrics for Si and III-V semiconductors Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, Gustafsson T Journal of Crystal Growth, 251(1-4), 645, 2003 |
3 |
Fabrication methods for a quantum cascade photonic crystal surface emitting laser Tennant DM, Colombelli R, Srinivasan K, Troccoli M, Painter O, Gmachi C, Capasso F, Sergent AM, Sivco DL, Cho AY Journal of Vacuum Science & Technology B, 21(6), 2907, 2003 |
4 |
Passivation of GaAs using gallium-gadolinium oxides Kwo J, Murphy DW, Hong M, Mannaerts JP, Opila RL, Masaitis RL, Sergent AM Journal of Vacuum Science & Technology B, 17(3), 1294, 1999 |
5 |
Structural properties of Ga2O3(Gd2O3)-GaAs interfaces Hong M, Marcus MA, Kwo J, Mannaerts JP, Sergent AM, Chou LJ, Hsieh KC, Cheng KY Journal of Vacuum Science & Technology B, 16(3), 1395, 1998 |