검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Towards understanding the characteristics of Ag-Al spiking on boron-doped silicon for solar cells Wohrle N, Lohmuller E, Greulich J, Werner S, Mack S Solar Energy Materials and Solar Cells, 146, 72, 2016 |
| 2 |
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm Najmzadeh M, Berthome M, Sallese JM, Grabinski W, Ionescu AM Solid-State Electronics, 98, 55, 2014 |
| 3 |
Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection Nallatamby JC, Abdelhadi K, Jacquet JC, Prigent M, Floriot D, Delage S, Obregon J Solid-State Electronics, 81, 35, 2013 |
| 4 |
Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain Najmzadeh M, Bouvet D, Grabinski W, Sallese JM, Ionescu AM Solid-State Electronics, 74, 114, 2012 |