검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films Natali F, Vezian S, Granville S, Damilano B, Trodahl HJ, Anton EM, Warring H, Semond F, Cordier Y, Chong SV, Ruck BJ Journal of Crystal Growth, 404, 146, 2014 |
| 2 |
Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates Ramdani MR, Chmielowska M, Cordier Y, Chenot S, Semond F Solid-State Electronics, 75, 86, 2012 |
| 3 |
Growth of GaN based structures on Si(110) by molecular beam epitaxy Cordier Y, Moreno JC, Baron N, Frayssinet E, Chauveau JM, Nemoz M, Chenot S, Damilano B, Semond F Journal of Crystal Growth, 312(19), 2683, 2010 |
| 4 |
Epitaxial growth of GdN on silicon substrate using an AlN buffer layer Natali F, Plank NOV, Galipaud J, Ruck BJ, Trodahl HJ, Semond F, Sorieul S, Hirsch L Journal of Crystal Growth, 312(24), 3583, 2010 |
| 5 |
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Cordier Y, Baron N, Chenot S, Vennegues P, Tottereau O, Leroux M, Semond F, Massies J Journal of Crystal Growth, 311(7), 2002, 2009 |
| 6 |
Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics Haffouz S, Semond F, Bardwell JA, Lester T, Tang H Journal of Crystal Growth, 311(7), 2087, 2009 |
| 7 |
Mechanisms of ammonia-MBE growth of GaN on SiC for transport devices Tang H, Rolfe S, Semond F, Bardwell JA, Baribeau JM Journal of Crystal Growth, 311(7), 2091, 2009 |
| 8 |
AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first? Le Louarn A, Vezian S, Semond F, Massies J Journal of Crystal Growth, 311(12), 3278, 2009 |
| 9 |
In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy Cordier Y, Baron N, Semond F, Massies J, Binetti M, Henninger B, Besendahl M, Zettler T Journal of Crystal Growth, 301, 71, 2007 |
| 10 |
Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE Cordier Y, Semond F, Massies J, Leroux M, Lorenzini P, Chaix C Journal of Crystal Growth, 301, 434, 2007 |