| 1 |
Trapezoid defect in 4H-SiC epilayers
Berechman RA, Chung S, Chung G, Sanchez E, Mahadik NA, Stahlbush RE, Skowronski M
Journal of Crystal Growth, 338(1), 16, 2012 |
| 2 |
Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
Baba M, Toh K, Toko K, Saito N, Yoshizawa N, Jiptner K, Sekiguchi T, Hara KO, Usami N, Suemasu T
Journal of Crystal Growth, 348(1), 75, 2012 |
| 3 |
Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application
Tsukada D, Matsumoto Y, Sasaki R, Takeishi M, Saito T, Usami N, Suemasu T
Journal of Crystal Growth, 311(14), 3581, 2009 |
| 4 |
Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique
Hatakeyama T, Ichinoseki K, Fukuda K, Higuchi N, Arai K
Journal of Crystal Growth, 310(5), 988, 2008 |
| 5 |
Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(111) substrates by molecular beam epitaxy
Suemasu T, Sasase M, Ichikawa Y, Kobayashi M, Tsukada D
Journal of Crystal Growth, 310(6), 1250, 2008 |
| 6 |
Factors affecting the graphitization behavior of the powder source during seeded sublimation growth of SiC bulk crystal
Li HQ, Chen XL, Ni DQ, Wu X
Journal of Crystal Growth, 258(1-2), 100, 2003 |
| 7 |
Nature and occurrence of defects in 6H-SiC Lely crystals
Tuominen M, Ellison A, Tuomi T, Yakimova R, Milita S, Janzen E
Journal of Crystal Growth, 225(1), 23, 2001 |
