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Leakage current and rectification behavior of Au / TiO2 / GaN junctions with TiO2 interlayer oxygen deposition pressure
Lee Y, Kang SH, Lee JH, Dho J
Current Applied Physics, 20(1), 5, 2020 |
| 2 |
Application of CaCu3Ti4O12 based quadruple perovskites as a promising candidate for optoelectronic devices
Pal K, Jana R, Dey A, Ray PP, Seikh MM, Gayen A
Chemical Physics Letters, 699, 229, 2018 |
| 3 |
Performance analysis of Fe-doped calcium copper titanate quadruple perovskite in optoelectronic device
Pal K, Jana R, Dey A, Ray PP, Seikh MM, Gayen A
Chemical Physics Letters, 709, 110, 2018 |
| 4 |
Effect of substrate on the structural, optical and electrical properties of SnS thin films grown by thermal evaporation method
Basak A, Hati A, Mondal A, Singh UP, Taheruddin SK
Thin Solid Films, 645, 97, 2018 |
| 5 |
Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer
Manjunath V, Reddy VR, Reddy PRS, Janardhanam V, Choi CJ
Current Applied Physics, 17(7), 980, 2017 |
| 6 |
Effect of annealing on Ni/GaN(0001) contact morphology
Grodzicki M, Mazur P, Zuber S, Pers J, Brona J, Ciszewski A
Applied Surface Science, 304, 24, 2014 |
| 7 |
Analytic resolution of Poisson-Boltzmann equation in nanometric semiconductor junctions
Murray H
Solid-State Electronics, 53(1), 107, 2009 |
| 8 |
Effects of temperature on the surface plasmon resonance at a metal-semiconductor interface
Chiang HP, Chen CW, Wu JJ, Li HL, Lin TY, Sanchez EJ, Leung PT
Thin Solid Films, 515(17), 6953, 2007 |
| 9 |
Choice of electrolyte for doping profiling in Si by electrochemical C-V technique
Basaran E
Applied Surface Science, 172(3-4), 345, 2001 |
| 10 |
Photosensitization of nanoporous TiO2 electrodes with InP quantum dots
Zaban A, Micic OI, Gregg BA, Nozik AJ
Langmuir, 14(12), 3153, 1998 |
