검색결과 : 82건
| No. | Article |
|---|---|
| 1 |
Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS mode Yoshimura S, Takano K, Ishida K, Shimomura K Journal of Crystal Growth, 509, 66, 2019 |
| 2 |
MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate Sugiyama H, Uchida K, Han X, Periyanayagam GK, Aikawa M, Hayasaka N, Shimomura K Journal of Crystal Growth, 507, 93, 2019 |
| 3 |
Regrown source/drain in InGaAs multi-gate MOSFETs Miyamoto Y, Kanazawad T, Kise N, Kinoshita H, Ohsawa K Journal of Crystal Growth, 522, 11, 2019 |
| 4 |
Growth of wurtzite InP/GaP core-shell nanowires by metal-organic molecular beam epitaxy Halder NN, Kelrich A, Kauffmann Y, Cohen S, Ritter D Journal of Crystal Growth, 463, 10, 2017 |
| 5 |
InAs nanostructures grown by droplet epitaxy directly on InP(001) substrates Fuster D, Abderrafi K, Alen B, Gonzalez Y, Wewior L, Gonzalez L Journal of Crystal Growth, 434, 81, 2016 |
| 6 |
Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD Orzali T, Vert A, Kim TW, Hung PY, Herman JL, Vivekanand S, Huang GS, Kelman M, Karim Z, Hill RJW, Rao SSP Journal of Crystal Growth, 427, 72, 2015 |
| 7 |
Tapering and crystal structure of indium phosphide nanowires grown by selective area vapor liquid solid epitaxy Greenberg Y, Kelrich A, Calahorra Y, Cohen S, Ritter D Journal of Crystal Growth, 389, 103, 2014 |
| 8 |
Improvements in epitaxial lateral overgrowth of InP by MOVPE Julian NH, Mages PA, Zhang C, Bowers JE Journal of Crystal Growth, 402, 234, 2014 |
| 9 |
Etching effect of tertiary-butyl chloride during InP-nanowire growth Tateno K, Zhang GQ, Gotoh H Journal of Crystal Growth, 402, 299, 2014 |
| 10 |
Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays Li Q, Ng KW, Tang CW, Lau KM, Hill R, Vert A Journal of Crystal Growth, 405, 81, 2014 |