| 1 |
Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film
Tanaka S, Shojiki K, Uesugi K, Hayashi Y, Miyake H
Journal of Crystal Growth, 512, 16, 2019 |
| 2 |
Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping
Sasaki T, Takahasi M
Journal of Crystal Growth, 512, 33, 2019 |
| 3 |
Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy
Piedra-Lorenzana JA, Yamane K, Shiota K, Fujimoto J, Tanaka S, Sekiguchi H, Okada H, Wakahara A
Journal of Crystal Growth, 512, 37, 2019 |
| 4 |
Metalorganic vapor-phase epitaxial growth simulation to realize high-quality and high-In-content InGaN alloys
Ohkawa K, Ichinohe F, Watanabe T, Nakamura K, Iida D
Journal of Crystal Growth, 512, 69, 2019 |
| 5 |
Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy
Zhang J, Chen XY, Ma YJ, Gong Q, Shi YH, Yang NN, Huang H, He GX, Gu Y, Zhang YG
Journal of Crystal Growth, 512, 84, 2019 |
| 6 |
Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor
Chang J, Choi S, Lee KJ, Bac SK, Choi S, Chongthanaphisut P, Lee S, Liu XY, Dobrowolska M, Furdyna JK
Journal of Crystal Growth, 512, 112, 2019 |
| 7 |
Reduction in residual impurities in semi-polar (3 0 (3)over-bar (1)over-bar) and (2 0 (2)over-bar (1)over-bar) GaN grown by metalorganic vapor phase epitaxy
Yamada H, Chonan H, Yamada T, Shimizu M
Journal of Crystal Growth, 512, 119, 2019 |
| 8 |
Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing
Hayashi Y, Tanigawa K, Uesugi K, Shojiki K, Miyake H
Journal of Crystal Growth, 512, 131, 2019 |
| 9 |
Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing
Okada N, Inomata Y, Ikeuchi H, Fujimoto S, Itakura H, Nakashima S, Kawamura R, Tadatomo K
Journal of Crystal Growth, 512, 147, 2019 |
| 10 |
Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(111)B
Henksmeier T, Shvarkov S, Trapp A, Reuter D
Journal of Crystal Growth, 512, 164, 2019 |
