검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure-chemical vapor deposition Hartmann JM, Bertin F, Rolland G, Semeria MN, Bremond G Thin Solid Films, 479(1-2), 113, 2005 |
| 2 |
Low thermal budget surface preparation of Si and SiGe Abbadie A, Hartmann JM, Holliger P, Semeria MN, Besson P, Gentile P Applied Surface Science, 225(1-4), 256, 2004 |
| 3 |
Advanced wet cleanings Post-CMP - Application to reclaim wafers Abbadie A, Crescente F, Semeria MN Journal of the Electrochemical Society, 151(1), G57, 2004 |
| 4 |
Engineering strained silicon on insulator wafers with the Smart Cut (TM) technology Ghyselen B, Hartmann JM, Ernst T, Aulnette C, Osternaud B, Bogumilowicz Y, Abbadie A, Besson P, Rayssac O, Tiberj A, Daval N, Cayrefourq I, Fournel F, Moriceau H, Di Nardo C, Andrieu F, Paillard V, Cabie M, Vincent L, Snoeck E, Cristiano F, Rocher A, Ponchet A, Claverie A, Boucaud P, Semeria MN, Bensahel D, Kernevez B, Mazure C Solid-State Electronics, 48(8), 1285, 2004 |
| 5 |
Gas immersion laser doping (GILD) for ultra-shallow junction formation Kerrien G, Sarnet T, Debarre D, Boulmer J, Hernandez M, Laviron C, Semeria MN Thin Solid Films, 453-54, 106, 2004 |
| 6 |
Optical characterization of laser processed ultra-shallow junctions Kerrien G, Hernandez M, Laviron C, Sarnet T, Debarre D, Noguchi T, Zahorski D, Venturini J, Semeria MN, Boulmer J Applied Surface Science, 208, 277, 2003 |
| 7 |
Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments Hernandez M, Venturini J, Zahorski D, Boulmer J, Debarre D, Kerrien G, Sarnet T, Laviron C, Semeria MN, Camel D, Santailler JL Applied Surface Science, 208, 345, 2003 |
| 8 |
Reduced pressure-chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 mu m photo-detection Masarotto L, Hartmann JM, Bremond G, Rolland G, Papon AM, Semeria MN Journal of Crystal Growth, 255(1-2), 8, 2003 |
| 9 |
Influence of carrier and doping gases on silicon quantum dots nucleation Mazen F, Baron T, Hartmann JM, Bremond G, Semeria MN Journal of Crystal Growth, 255(3-4), 250, 2003 |
| 10 |
Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates Hartmann JM, Abbadie A, Vinet M, Clavelier L, Holliger P, Lafond D, Semeria MN, Gentile P Journal of Crystal Growth, 257(1-2), 19, 2003 |