검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology O'uchi SI, Endo K, Masahara M, Sakamoto K, Liu Y, Matsukawa T, Sekigawa T, Koike H, Suzuki E Solid-State Electronics, 52(11), 1694, 2008 |
| 2 |
The APD annihilation mechanism of 3C-SiC hetero-epilayer on Si(001) substrate Ishida Y, Takahashi T, Okumura H, Sekigawa T, Yoshida S Materials Science Forum, 338-3, 253, 2000 |
| 3 |
Effect of post-oxidation-annealing in hydrogen on SiO2/4H-SiC interface Suzuki S, Fukuda K, Okushi H, Nagai K, Sekigawa T, Yoshida S, Tanaka T, Arai K Materials Science Forum, 338-3, 1073, 2000 |
| 4 |
Schottky barrier characteristics of 3C-SiC epilayers grown by low pressure chemical vapor deposition Ishida Y, Takahashi T, Okumura H, Sekigawa T, Yoshida S Materials Science Forum, 338-3, 1235, 2000 |
| 5 |
Effect of off-angle from Si (0001) surface and polytype on surface morphology of SiC and C-V characteristics of SiC MOS structures Fukuda K, Suzuki S, Senzaki J, Kosugi R, Nagai K, Sekigawa T, Okushi H, Yoshida S, Tanaka T, Arai K Materials Science Forum, 338-3, 1283, 2000 |
| 6 |
Fabrication of Nanometer-Size Si Wires Using a Bevel SiO2 Wall as an Electron-Cyclotron-Resonance Plasma-Etching Mask Ishii K, Suzuki E, Sekigawa T Journal of Vacuum Science & Technology B, 15(3), 543, 1997 |
| 7 |
Surface passivation at a SiO2/n(+)-layer interface Takato H, Sekigawa T Solar Energy Materials and Solar Cells, 48(1), 117, 1997 |
| 8 |
Recrystallization of polycrystalline silicon films on ceramics by electron beam Takahashi T, Shimokawa R, Matsumoto Y, Ishii K, Sekigawa T Solar Energy Materials and Solar Cells, 48(1), 327, 1997 |