화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Ultra-thin body & buried oxide SOI substrate development and qualification for Fully Depleted SOI device with back bias capability
Schwarzenbach W, Nguyen BY, Allibert F, Girard C, Maleville C
Solid-State Electronics, 117, 2, 2016
2 Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes
Besnard G, Garros X, Andrieu F, Nguyen P, Van den Daele W, Reynaud P, Schwarzenbach W, Delprat D, Bourdelle KK, Reimbold G, Cristoloveanu S
Solid-State Electronics, 113, 127, 2015
3 Reliability of ultra-thin buried oxides for multi-V-T FDSOI technology
Besnard G, Garros X, Nguyen P, Andrieu F, Reynaud P, Van Den Daele W, Bourdelle KK, Schwarzenbach W, Toffoli A, Kies R, Delprat D, Reimbold G, Cristoloveanu S
Solid-State Electronics, 97, 8, 2014
4 Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations
Glowacki E, Le Royer C, Morand Y, Pedini JM, Denneulin T, Cooper D, Barnes JP, Nguyen P, Rouchon D, Hartmann JM, Gourhant O, Baylac E, Campidelli Y, Barge D, Bonnin O, Schwarzenbach W
Solid-State Electronics, 97, 82, 2014
5 Kinetics of F Atoms and Fluorocarbon Radicals Studied by Threshold Ionization Mass-Spectrometry in a Microwave CF4 Plasma
Tserepi A, Schwarzenbach W, Derouard J, Sadeghi N
Journal of Vacuum Science & Technology A, 15(6), 3120, 1997
6 Sheath Impedance Effects in Very High-Frequency Plasma-Experiments
Schwarzenbach W, Howling AA, Fivaz M, Brunner S, Hollenstein C
Journal of Vacuum Science & Technology A, 14(1), 132, 1996
7 Anionic Clusters in Dusty Hydrocarbon and Silane Plasmas
Hollenstein C, Schwarzenbach W, Howling AA, Courteille C, Dorier JL, Sansonnens L
Journal of Vacuum Science & Technology A, 14(2), 535, 1996