검색결과 : 7건
No. | Article |
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1 |
Ultra-thin body & buried oxide SOI substrate development and qualification for Fully Depleted SOI device with back bias capability Schwarzenbach W, Nguyen BY, Allibert F, Girard C, Maleville C Solid-State Electronics, 117, 2, 2016 |
2 |
Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes Besnard G, Garros X, Andrieu F, Nguyen P, Van den Daele W, Reynaud P, Schwarzenbach W, Delprat D, Bourdelle KK, Reimbold G, Cristoloveanu S Solid-State Electronics, 113, 127, 2015 |
3 |
Reliability of ultra-thin buried oxides for multi-V-T FDSOI technology Besnard G, Garros X, Nguyen P, Andrieu F, Reynaud P, Van Den Daele W, Bourdelle KK, Schwarzenbach W, Toffoli A, Kies R, Delprat D, Reimbold G, Cristoloveanu S Solid-State Electronics, 97, 8, 2014 |
4 |
Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (-2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations Glowacki E, Le Royer C, Morand Y, Pedini JM, Denneulin T, Cooper D, Barnes JP, Nguyen P, Rouchon D, Hartmann JM, Gourhant O, Baylac E, Campidelli Y, Barge D, Bonnin O, Schwarzenbach W Solid-State Electronics, 97, 82, 2014 |
5 |
Kinetics of F Atoms and Fluorocarbon Radicals Studied by Threshold Ionization Mass-Spectrometry in a Microwave CF4 Plasma Tserepi A, Schwarzenbach W, Derouard J, Sadeghi N Journal of Vacuum Science & Technology A, 15(6), 3120, 1997 |
6 |
Sheath Impedance Effects in Very High-Frequency Plasma-Experiments Schwarzenbach W, Howling AA, Fivaz M, Brunner S, Hollenstein C Journal of Vacuum Science & Technology A, 14(1), 132, 1996 |
7 |
Anionic Clusters in Dusty Hydrocarbon and Silane Plasmas Hollenstein C, Schwarzenbach W, Howling AA, Courteille C, Dorier JL, Sansonnens L Journal of Vacuum Science & Technology A, 14(2), 535, 1996 |