화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Determination of the thermal cycle during flash lamp annealing without a direct temperature measurement
Rebohle L, Neubert M, Schumann T, Skorupa W
International Journal of Heat and Mass Transfer, 126, 1, 2018
2 The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy
Schumann T, Lopes JMJ, Wofford JM, Oliveira MH, Dubslaff M, Hanke M, Jahn U, Geelhaar L, Riechert H
Journal of Crystal Growth, 425, 274, 2015
3 Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation
Voelskow M, Endler R, Schumann T, Mucklich A, Ou X, Liepack EH, Gebel T, Peeva A, Skorupa W
Journal of Crystal Growth, 388, 70, 2014
4 Implantation-caused open volume defects in Ge after flash lamp annealing (FLA) probed by slow positron implantation spectroscopy (SPIS)
Anwand W, Skorupa W, Schumann T, Posselt M, Schmidt B, Grotzschel R, Brauer G
Applied Surface Science, 255(1), 81, 2008