검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Immunomodulatory Effects of Dendritic Poly(ethyleneirnine) Glycoarchitectures on Human Multiple Myeloma Cell Lines, Mesenchymal Stromal Cells, and in Vitro Differentiated Macrophages for an Ideal Drug Delivery System in the Local Treatment of Multiple Myeloma Schulze F, Keperscha B, Appelhans D, Rosen-Wolff A Biomacromolecules, 20(7), 2713, 2019 |
| 2 |
Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates Schulze F, Kisel O, Dadgar A, Krtschil A, Blasing J, Kunze M, Daumiller I, Hempel T, Diez A, Clos R, Christen J, Krost A Journal of Crystal Growth, 299(2), 399, 2007 |
| 3 |
MOVPE growth of GaN on Si - Substrates and strain Dadgar A, Veit P, Schulze F, Blasing J, Krtschil A, Witte H, Diez A, Hempel T, Christen J, Clos R, Krost A Thin Solid Films, 515(10), 4356, 2007 |
| 4 |
Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy Schulze F, Dadgar A, Blasing J, Hempel T, Diez A, Christen J, Krost A Journal of Crystal Growth, 289(2), 485, 2006 |
| 5 |
In situ monitoring of the stress evolution in growing group-III-nitride layers Krost A, Dadgar A, Schulze F, Blasing J, Strassburger G, Clos R, Diez A, Veit P, Hempel T, Christen J Journal of Crystal Growth, 275(1-2), 209, 2005 |
| 6 |
Heteroepitaxy of GaN on silicon: In situ measurements Krost A, Dadgar A, Schulze F, Clos R, Haberland K, Zettler T Materials Science Forum, 483, 1051, 2005 |
| 7 |
In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature Dadgar A, Schulze F, Zettler T, Haberland K, Clos R, Strassburger G, Blasing J, Diez A, Krost A Journal of Crystal Growth, 272(1-4), 72, 2004 |
| 8 |
GaN heteroepitaxy on Si(001) Schulze F, Dadgar A, Blasing J, Krost A Journal of Crystal Growth, 272(1-4), 496, 2004 |
| 9 |
Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth model Krost A, Blasing J, Schulze F, Schon O, Alam A, Heuken M Journal of Crystal Growth, 221, 251, 2000 |