검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Growth of c-plane ZnO on gamma-LiAlO2 (100) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy Yan T, Lu CYJ, Schuber R, Chang L, Schaadt DM, Chou MMC, Ploog KH, Chiang CM Applied Surface Science, 351, 824, 2015 |
| 2 |
Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy Chen YL, Lo IA, Gau MH, Hsieh CH, Sham MW, Pang WY, Hsu YC, Tsai JK, Schuber R, Schaadt D Thin Solid Films, 520(19), 6134, 2012 |
| 3 |
Growth of non-polar GaN on LiGaO2 by plasma-assisted MBE Schuber R, Chen YL, Shih CH, Huang TH, Vincze P, Lo I, Chang LW, Schimmel T, Chou MMC, Schaadt DM Journal of Crystal Growth, 323(1), 76, 2011 |
| 4 |
Growth of A-plane GaN on (010) LiGaO2 by plasma-assisted MBE Schuber R, Chou MMC, Vincze P, Schimmel T, Schaadt DM Journal of Crystal Growth, 312(10), 1665, 2010 |
| 5 |
Growth of M-plane GaN on (100) LiGaO2 by plasma-assisted molecular beam epitaxy Schuber R, Chou MMC, Schaadt DM Thin Solid Films, 518(23), 6773, 2010 |