검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
A charge-based model of Junction Barrier Schottky rectifiers Latorre-Rey AD, Mudholkar M, Quddus MT, Salih A Solid-State Electronics, 144, 67, 2018 |
| 2 |
A JBS diode with controlled forward temperature coefficient and surge current capability Dahlquist F, Lendenmann H, Ostling M Materials Science Forum, 389-3, 1129, 2002 |
| 3 |
Low power dissipation SiC Schottky rectifiers with a dual-metal planar structure Roccaforte F, La Via F, La Magna A, Di Franco S, Raineri V Materials Science Forum, 433-4, 819, 2002 |
| 4 |
Effects of thermal annealing on Cu/6H-SiC Schottky properties Hatayama T, Suezaki T, Kawahito K, Uraoka Y, Fuyuki T Materials Science Forum, 353-356, 615, 2001 |
| 5 |
Optical beam induced current analysis of high-voltage 4H-SiC Schottky rectifiers Tsuji T, Asai R, Ueno K, Ogino S Materials Science Forum, 338-3, 1195, 2000 |
| 6 |
Breakdown voltage improvement of 4H-SiC Schottky diodes by a thin surface implant Khemka V, Chatty K, Chow TP, Gutmann RJ Materials Science Forum, 338-3, 1211, 2000 |