검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC Tsui BY, Cheng JC, Yen CT, Lee CY Solid-State Electronics, 133, 83, 2017 |
| 2 |
The Effect of Gamma Irradiation on Electrical Characteristics of Au/Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes Tascioglu I, Uslu H, Altindal S, Durmus P, Dokme I, Tunc T Journal of Applied Polymer Science, 118(1), 596, 2010 |
| 3 |
Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures Liou BW Thin Solid Films, 517(24), 6558, 2009 |