검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications Zhou Q, Yang S, Chen WJ, Zhang B, Feng ZH, Cai SJ, Chen KJ Solid-State Electronics, 91, 19, 2014 |
| 2 |
An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration Park J, Ozbek AM, Ma L, Veety MT, Morgensen MP, Barlage DW, Wheeler VD, Johnson MAL Solid-State Electronics, 54(12), 1680, 2010 |