화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 High-resolution scanning spreading resistance microscopy of surrounding-gate transistors
Alvarez D, Schomann S, Goebel B, Manger D, Schlosser T, Slesazeck S, Hartwich J, Kretz J, Eyben P, Fouchier M, Vandervorst W
Journal of Vacuum Science & Technology B, 22(1), 377, 2004
2 Passivation of the Ge/InP(110) interface by As interlayers: Interface reactions and band offsets
Preobrajenski AB, Schomann S, Gebhardt RK, Chasse T
Journal of Vacuum Science & Technology B, 18(4), 1973, 2000
3 Surfactant and ordering effects of arsenic interlayers at the Pb/InP(110) interface
Schomann S, Chasse T
Journal of Vacuum Science & Technology A, 16(5), 2990, 1998