화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Doping of Czochralski-grown bulk beta-Ga2O3 single crystals with Cr, Ce and Al
Galazka Z, Ganschow S, Fiedler A, Bertram R, Klimm D, Irmscher K, Schewski R, Pietsch M, Albrecht M, Bickermann M
Journal of Crystal Growth, 486, 82, 2018
2 Semiconducting Sn-doped beta-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
Baldini M, Albrecht M, Fiedler A, Irmscher K, Klimm D, Schewski R, Wagner G
Journal of Materials Science, 51(7), 3650, 2016
3 Structural properties of Si-doped beta-Ga2O3 layers grown by MOVPE
Gogova D, Wagner G, Baldini M, Schmidbauer M, Irmscher K, Schewski R, Galazka Z, Albrecht M, Fornari R
Journal of Crystal Growth, 401, 665, 2014
4 On the bulk beta-Ga2O3 single crystals grown by the Czochralski method
Galazka Z, Irmscher K, Uecker R, Bertram R, Pietsch M, Kwasniewski A, Naumann M, Schulz T, Schewski R, Klimm D, Bickermann M
Journal of Crystal Growth, 404, 184, 2014