화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Dopants and defects in InN and InGaN alloys
Waluklewicz W, Jones RE, Li SX, Yu KM, Ager JW, Haller EE, Lu H, Schaff W
Journal of Crystal Growth, 288(2), 278, 2006
2 Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
Dimitrov R, Tilak V, Yeo W, Green B, Kim H, Smart J, Chumbes E, Shealy JR, Schaff W, Eastman LF, Miskys C, Ambacher O, Stutzmann M
Solid-State Electronics, 44(8), 1361, 2000