검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Nitridation of (111)Al substrates for GaN growth by molecular beam epitaxy Sawadaishi M, Taguchi S, Sasaya K, Honda T Journal of Crystal Growth, 311(7), 1994, 2009 |
| 2 |
Formation of AlN layer on (111)Al substrate by ammonia nitridation Honda T, Yamamoto H, Sawadaishi M, Taguchi S, Sasaya K Journal of Crystal Growth, 311(10), 2844, 2009 |
| 3 |
Introduction of preheated ammonia during GaN growth on Si by compound-source MBE at low temperature Honda T, Sawadaishi M, Yamamoto H, Arai M, Yoshioka K, Okuhata T Journal of Crystal Growth, 310(7-9), 1781, 2008 |
| 4 |
Compound-source molecular beam epitaxy of GaN using GaN powder and ammonia as sources Sawada M, Sawadaishi M, Yamamoto H, Arai M, Honda T Journal of Crystal Growth, 301, 67, 2007 |