검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors Lee JW, Jeon MH, Cho GS, Yim HC, Chang SK, Kim KK, Devre M, Johnson D, Sasserath JN, Pearton SJ Solid-State Electronics, 46(5), 773, 2002 |
| 2 |
Utilization of optical emission spectroscopy for end-point detection during AlGaAs/GaAs and InGaP/GaAs etching in BCl3/N-2 inductively coupled plasmas Lee JW, Jeon MH, Cho GS, Yim HC, Chang SK, Kim KK, Devre M, Lee YS, Westerman R, Johnson D, Sasserath JN, Pearton SJ Journal of the Electrochemical Society, 148(9), G472, 2001 |
| 3 |
Comparison of the effects of H-2 and D-2 plasma exposure on GaAs MESFETs Luo B, Ren F, Lee KP, Pearton SJ, Wu CS, Johnson D, Sasserath JN Solid-State Electronics, 45(9), 1625, 2001 |
| 4 |
Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs Lee JW, Jeon MH, Devre M, Mackenzie KD, Johnson D, Sasserath JN, Pearton SJ, Ren F, Shul RJ Solid-State Electronics, 45(9), 1683, 2001 |
| 5 |
High selectivity Inductively Coupled Plasma etching of GaAs over InGaP Hays DC, Cho H, Lee JW, Devre MW, Reelfs BH, Johnson D, Sasserath JN, Meyer LC, Toussaint E, Ren F, Abernathy CR, Pearton SJ Applied Surface Science, 156(1-4), 76, 2000 |
| 6 |
Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition Lee JW, Mackenzie KD, Johnson D, Sasserath JN, Pearton SJ, Ren F Journal of the Electrochemical Society, 147(4), 1481, 2000 |
| 7 |
Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas Lee JW, Devre MW, Reelfs BH, Johnson D, Sasserath JN, Clayton F, Hays D, Pearton SJ Journal of Vacuum Science & Technology A, 18(4), 1220, 2000 |