검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
The impact of the surface morphology on optical features of the green emitting InGaN/GaN multiple quantum wells Shmidt NM, Chernyakov AE, Talnishnih NA, Nikolaev AE, Sakharov AV, Petrov VN, Gushchina EV, Shabunina EI Journal of Crystal Growth, 520, 82, 2019 |
| 2 |
Growth of III-N/graphene heterostructures in single vapor phase epitaxial process Lundin WV, Zavarin EE, Sakharov AV, Zakheim DA, Davydov VY, Smirnov AN, Eliseyev IA, Yagovkina MA, Brunkov PN, Lundina EY, Markov LK, Tsatsulnikov AF Journal of Crystal Growth, 504, 1, 2018 |
| 3 |
Study of GaN doping with carbon from propane in a wide range of MOVPE conditions Lundin WV, Sakharov AV, Zavarin EE, Kazantsev DY, Ber BY, Yagovkina MA, Brunkov PN, Tsatsulnikov AF Journal of Crystal Growth, 449, 108, 2016 |
| 4 |
Fast AlGaN growth in a whole composition range in planetary reactor Lundin WV, Nikolaev AE, Rozhavskaya MM, Zavarin EE, Sakharov AV, Troshkov SI, Yagovkina MA, Tsatsulnikov AF Journal of Crystal Growth, 370, 7, 2013 |
| 5 |
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice Lundin WV, Nikolaev AE, Sakharov AV, Zavarin EE, Valkovskiy GA, Yagovkina MA, Usov SO, Kryzhanovskaya NV, Sizov VS, Brunkov PN, Zakgeim AL, Cherniakov AE, Cherkashin NA, Hytch MJ, Yakovlev EV, Bazarevskiy DS, Rozhavskaya MM, Tsatsulnikov AF Journal of Crystal Growth, 315(1), 267, 2011 |
| 6 |
AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique Jmerik VN, Shubina TV, Mizerov AM, Belyaev KG, Sakharov AV, Zamoryanskaya MV, Sitnikova AA, Davydov VY, Kop'ev PS, Lutsenko EV, Rzheutskii NV, Danilchik AV, Yablonskii GP, Ivanov SV Journal of Crystal Growth, 311(7), 2080, 2009 |
| 7 |
Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs Sakharov AV, Lundin WV, Zavarin EE, Sinitsyn MA, Nikolaev AE, Lundina EY, Tsatsulnikov AF Journal of Crystal Growth, 310(23), 5151, 2008 |
| 8 |
Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study Kondratyev AV, Talalaev RA, Lundin WV, Sakharov AV, Tsatsul'nikov AV, Zavarin EE, Fomin AV, Sizov DS Journal of Crystal Growth, 272(1-4), 420, 2004 |
| 9 |
Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions Georgakilas A, Amimer K, Tzanetakis P, Hatzopoulos Z, Cengher M, Pecz B, Czigany Z, Toth L, Baidakova MV, Sakharov AV, Davydov VY Journal of Crystal Growth, 227, 410, 2001 |
| 10 |
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots Maleev NA, Sakharov AV, Moeller C, Krestnikov IL, Kovsh AR, Mikhrin SS, Zhukov AE, Ustinov VM, Passenberg W, Pawlowski E, Kunezel H, Tsatsul'nikov AF, Ledentsov NN, Bimberg D, Alferov ZI Journal of Crystal Growth, 227, 1146, 2001 |