검색결과 : 25건
| No. | Article |
|---|---|
| 1 |
Epitaxial formation of Ni germanide on Ge(001) substrate by reactive deposition Deng Y, Nakatsuka O, Suzuki A, Sakashita M, Zaima S Solid-State Electronics, 110, 44, 2015 |
| 2 |
Stabilized formation of tetragonal ZrO2 thin film with high permittivity Kato K, Saito T, Shibayama S, Sakashita M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S Thin Solid Films, 557, 192, 2014 |
| 3 |
Importance of control of oxidant partial pressure on structural and electrical properties of Pr-oxide films Kato K, Sakashita M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S Thin Solid Films, 557, 276, 2014 |
| 4 |
Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties Shibayama S, Kato K, Sakashita M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S Thin Solid Films, 557, 282, 2014 |
| 5 |
Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure Kato K, Sakashita M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S Solid-State Electronics, 83, 56, 2013 |
| 6 |
Improvement of Al2O3/Ge interfacial properties by O-2-annealing Shibayama S, Kato K, Sakashita M, Takeuchi W, Nakatsuka O, Zaima S Thin Solid Films, 520(8), 3397, 2012 |
| 7 |
Control of interfacial properties of Pr-oxide/Ge gate stack structure by introduction of nitrogen Kato K, Kondo H, Sakashita M, Nakatsuka O, Zaima S Solid-State Electronics, 60(1), 70, 2011 |
| 8 |
Formation processes of Ge3N4 films by radical nitridation and their electrical properties Kato K, Kondo H, Sakashita M, Zaima S Thin Solid Films, 518, S226, 2010 |
| 9 |
Characterization of the Clathrate Hydrate Formed with Methane and Propan-1-ol Yasuda K, Takeya S, Sakashita M, Yamawaki H, Ohmura R Industrial & Engineering Chemistry Research, 48(20), 9335, 2009 |
| 10 |
Silicide and germanide technology for contacts and gates in MOSFET applications Zaima S, Nakatsuka O, Kondo H, Sakashita M, Sakai A, Ogawa M Thin Solid Films, 517(1), 80, 2008 |