검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode Saha AR, Dimitriu CB, Horsfall AB, Chattopadhyay S, Wright NG, O'Neill AG, Maiti CK Applied Surface Science, 252(11), 3933, 2006 |
| 2 |
Interface properties of room-temperature-grown oxides on Si0.15Ge0.85 layers Das R, Bera MK, Chakraborty S, Saha AR, Maiti CK Journal of the Electrochemical Society, 153(5), G511, 2006 |
| 3 |
Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique Saha AR, Chattopadhyay S, Das R, Bose C, Maiti CK Solid-State Electronics, 50(7-8), 1269, 2006 |
| 4 |
Effect of silicidation on the electrical characteristics of polycrystalline-SiGe Schottky diode Saha AR, Chattopadhyay S, Bose C, Maiti CK Thin Solid Films, 504(1-2), 86, 2006 |
| 5 |
Contact metallization on strained-Si Saha AR, Chattopadhyay S, Maiti CK Solid-State Electronics, 48(8), 1391, 2004 |