검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method Chaussende D, Balloud C, Auvray L, Baillet F, Zielinski M, Juillaguet S, Mermoux M, Pernot E, Camassel J, Pons M, Madar R Materials Science Forum, 457-460, 91, 2004 |
| 2 |
Homoepitaxial'web growth' of SiC to terminate C-axis screw dislocations and-enlarge step-free surfaces Neudeck PG, Powell JA, Trunek A, Spry D, Beheim GM, Benavage E, Abel P, Vetter WM, Dudley M Materials Science Forum, 389-3, 251, 2002 |
| 3 |
Polytype identification and mapping in heteroepitaxial growth of 3C on atomically flat 4H-SiC mesas using synchrotron white-beam X-ray topography Dudley M, Vetter WM, Huang XR, Neudeck PG, Powell JA Materials Science Forum, 389-3, 391, 2002 |
| 4 |
Characterization of 2in SiC as-grown bulk by SWBXT at SPring-8 Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S Materials Science Forum, 389-3, 407, 2002 |
| 5 |
Observation of 2in SiC wafer by SWBXT at SPring-8 Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S Materials Science Forum, 389-3, 411, 2002 |
| 6 |
Characterizations of ZnSe single crystals grown by physical vapor transport Su CH, Dudley M, Matyi R, Feth S, Lehoczky SL Journal of Crystal Growth, 208(1-4), 237, 2000 |
| 7 |
Structural investigation on the nature of surface defects present in silicon carbide wafers containing varying amount of micropipes Shamsuzzoha M, Saddow SE, Schattner TE, Jin L, Dudley M, Rendakova SV, Dmitriev VA Materials Science Forum, 338-3, 453, 2000 |
| 8 |
Correlation of EBIC and SWBXT imaged defects and epilayer growth pits in 6H-SiC Schottky diodes Schnabel CM, Tabib-Azar M, Neudeck PG, Bailey SG, Su HB, Dudley M, Raffaelle RP Materials Science Forum, 338-3, 489, 2000 |